/* Stvrtok 22.9.2022 8,00-10,30(2.5h) a 13,00-19,00(6h) STUDY Resers k teme „Tvorba modelov SiC MOSFET tranzistorov v SPICE“
STUDIUM:
— Resers k teme tvorbe a pouzitie modelov SiC MOSFET tranzistorov v SPICE
— preskumana cast odkazov vytvorena Googlom na zaklade vyhladavcich slov : „sic mosfet pspice model“
ULOHY PRE DIPLOMANTA DP VLCEK :
1. Do ktorej kapitoly DP by sa mala zaradit tato tema ?
2. ZAKLADNA ULOHA: Prejst si uvedene zdroje informacii s cielmi:
— porozumiet ako sa buduje staticky (zakladny) model SiC MOSFET tranzistoru a dalsie urovne SPICE modelu zahrnujuce uz vplyv teploty
— osvojit si rozne varianty (levely) SPICE modelov SiC MOSFET tranzistorov/vykonovych modulov (firmy Infineon, Wolfspeed, MICROCHIP ….)
— osvojit si pracu s externymi modelmi SiC MOSFET (Wolfspeed, Infineon, ROHM) ci uz v LTSpice (tento program sa musi pouzit v diplomovej praci), ale aj v inych programoch (Infinieon Designer, Speedfit od Wolfspeed)
— premysliet si ako by som modeloval v programe LTspice vybijanie DC link kapacit s dvoma SiC MOSFET tranzistormi od WolfSpeed a potom od Infinieonu (jeden tranzistor ON a druhy v linearnom rezime aktivnej zataze) – cielom je priblizit sa simulaciami k datasheetu tranzistoru
— ako by som zohladnil pri tychto simulaciach narast teploty puzdier SiC MOSFET tranzisorov pocas procesu vybijania
— porozumiet z datasheetu budica (Evakit FRDMGD3162HBIEVM ) ako sa pouzity budic adaptuje na rezim aktivneho vybijania DC link kapacitorov – ako sa lisia budice s a bez moznosti aktivneho vybijania
3. Ciastkove ulohy :
— ad [2] Zohnat IEEE clanok („A Physically Based Scalable SPICE Model for Silicon carbide Power MOSFETS, Canhong He, James Victory, APEC 2017, link: https://www.semanticscholar.org/paper/A-physically-based-scalable-SPICE-model-for-silicon-He-Victory/ee71758e30c727f5ef71dfaa44b11d775ebe449f „)
— ad [3] Vytypovat SiC MOSFET Modul/tranzistor najblizssi pouzitemu v DP (vybrat to podla datasheetu)a vyziadat ho cez stranku https://www.infineon.com/models
— preskumat na tejto stranke ponuky roznych modelov – medzi nimi su modely SPICE a PSPICE
— ad [10][20]- zohnat tieto IEEE clanky
— Zaradit info o programe PLECS [26] do diplomovej prace, odskusat si tento program
— POZNAMKA :
- Subory oznacene ako LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\ su aj na Google Drive kde maju DP VLCEK a DP BLASKO pristup do adresara LINK
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SUMARIZACIA ESERSE PODLA TEM :
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Suhrnne informacie:
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— [13] (2020) aktualny status vyvoja PEU v SG vratane uvedenia potencionalnych dodavatelov SIC
— [14] (2020)Schaeffler material (2020): E-Motor & PEU
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Firemne informacie vyrobcov o komponentoch SiC MOSFET/VYKONOVE MODULY
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— [3] TOP INFO: rozne informacie o SiC vykonovych suciastkach a modeloch roznych typov SiC vykonovych prvkov spolocnosti Infinieon (dolezite je napr. zavedenie tepelne zavislych modelov)
— [25] Firemne materialy (2020): WolfSpeed – potencialny dodavatel pre SG, modely nimi vyrabanych tranzistorov SiC MOSFET, priklady simulacie obvodov v programoch LTSpice a PSIM, ako v elektronickej simulacii zohladnit vplyv meniacej sa teploty teploty puzdra
— [26] Informacia o simulacnom programe PLECS (2022) spolocnosti PLEXSIM – program je urceny pre vykonovu elektroniku, ma STANDALONE verziu a verziu ako blockset pre SIMULINK, spomina ho Wolfspeed
— [11] TOP zdroj pre diploma thesiss s vybornou literaturou : Firemny material ONSEMI (2021 – NOVY!)Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices najkompaktnejsi popis zakladneho modelu SiC MOSFET a SiC IGBT vratane popisu verifikacie tohoto modelu
— [12] TOP zdroj pre diploma thesiss: ROHM webstranky o SiC vykonovych polovodicoch vratane vyborneho PDF materialu – podla [13] jeden z potencialnych dodavatelov SiC komponentov pre SG
— [24] Firemny material (2020): MICROCHIPpopis modelov SiC vykonovych komponenetov
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Ako vytvorit SPICE model SiC MOSFET tranzistora
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— [1] ako vyzera vytvorenie SPICE modelu pre SiC MOSFET – odkaz na zdrojovu IEEE publikaciu
— [4] podrobny popis vytvorenia modelu SiC MOSFET tranzistora a tiez popis ako sa model overi
— [5] klucovy clanok navod ako vytvorit SPICE model z udajov v datasheete
— [7] dalsi clanok o modeli SiC MOSFET tranzistora
— [8] dalsi clanok o modeli SiC MOSFET tranzistora
— [20] Clanok IEEE (2017): Analysis of SPICE models for SiC MOSFET power devices
— [22] Clanok(2022): Specifika modelovania SiC MOSFET
— [23] Clanok (2016): PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation
TEPELNE ZAVISLY MODEL SPICE:
— [15] Clanok : Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET
— [18] clanok (2017): modelovanie SiC MOSFET so zapocitanim tepelnych procesov
MATLAB:
— [10] Clanok (2015), zamknuty IEEE clanok , abstrakt hovori o simulacii v MATLAB-e a validacii tohoto modelu
— [19] vedecky clanok (2021): prostredie MATLAB
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Ako pouzivat hotove modely SPICE SiC MOSFET tranzistora:
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— [2] simulacny SW LTSpice a ako pracovat s uz hotovym modelom SiC MOSFET vytvorenym firmou Wolfspeed (podla [13] jeden z potencialnych dodavatelov SiC komponentov pre SG
— [6] velmi popisny clanok od Cadence (vyraba OrCAD)o modeloch SiC MOSFET- povazujem ho za klucovy pohlad experta na modely SiC MOSFET
— [9] Informativny clanok(2012) Wolfspedd (byvaly Cree) je firma vyrabajuca SiC MOSFET-y, clanok informuje o vlastnych tepelne zavislych modeloch SPICE a o tom ako ich zaintegrovat do LTSpice-suvis s videom [2]
— [16] TOP INFO Technical Article (2020): How to Simulate Silicon Carbide Transistors with LTspice
— [17] technical Articel (2020): tazisko simulacie v LT Spice je tu kladene na budenie driverom
— [21] technicky clanok (2020): modelovanie SiC MOSFET v LTSpice, prakticke skusenosti
SUMAR STUDIA :
— [1] ako vyzera vytvorenie SPICE modelu pre SiC MOSFET – odkaz na zdrojovu IEEE publikaciu
— [2] simulacny SW LTSpice a ako pracovat s uz hotovym modelom SiC MOSFET vytvorenym firmou Wolfspeed (podla [13] jeden z potencialnych dodavatelov SiC komponentov pre SG)
— [3] TOP INFO: rozne informacie o SiC vykonovych suciastkach a modeloch roznych typov SiC vykonovych prvkov spolocnosti Infinieon (dolezite je napr. zavedenie tepelne zavislych modelov)
— [4] podrobny popis vytvorenia modelu SiC MOSFET tranzistora a tiez popis ako sa model overi
— [5] klucovy clanok navod ako vytvorit SPICE model z udajov v datasheete
— [6] velmi popisny clanok od Cadence (vyraba OrCAD)o modeloch SiC MOSFET- povazujem ho za klucovy pohlad experta na modely SiC MOSFET
— [7] dalsi clanok o modeli SiC MOSFET tranzistora
— [8] dalsi clanok o modeli SiC MOSFET tranzistora
— [9] Informativny clanok(2012) Wolfspedd (byvaly Cree) je firma vyrabajuca SiC MOSFET-y, clanok informuje o vlastnych tepelne zavislych modeloch SPICE a o tom ako ich zaintegrovat do LTSpice-suvis s videom [2]
— [10] Clanok (2015), zamknuty IEEE clanok , abstrakt hovori o simulacii v MATLAB-e a validacii tohoto modelu
— [11] TOP zdroj pre diploma thesiss s vybornou literaturou : Firemny material ONSEMI (2021 – NOVY!)Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices najkompaktnejsi popis zakladneho modelu SiC MOSFET a SiC IGBT vratane popisu verifikacie tohoto modelu
— [12] TOP zdroj pre diploma thesiss: ROHM webstranky o SiC vykonovych polovodicoch vratane vyborneho PDF materialu – podla [13] jeden z potencialnych dodavatelov SiC komponentov pre SG
— [13] (2020) aktualny status vyvoja PEU v SG vratane uvedenia potencionalnych dodavatelov SIC
— [14] (2020)Schaeffler material (2020): E-Motor & PEU
— [15] Clanok : Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET
— [16] TOP INFO Technical Article (2020): How to Simulate Silicon Carbide Transistors with LTspice
— [17] technical Articel (2020): tazisko simulqcie v LT Spice je tu kladene na budenie driverom
— [18] clanok (2017): modelovanie SiC MOSFET so zapocitanim tepelnych procesov
— [19] vedecky clanok (2021): prostredie MATLAB
— [20] Clanok IEEE (2017): Analysis of SPICE models for SiC MOSFET power devices
— [21] technicky clanok (2020): modelovanie SiC MOSFET v LTSpice, prakticke skusenosti
— [22] Clanok(2022): Specifika modelovania SiC MOSFET
— [23] Clanok (2016): PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation
— [24] Firemny material (2020): MICROCHIPpopis modelov SiC vykonovych komponenetov
— [25] Firemne materialy (2020): WolfSpeed – potencialny dodavatel pre SG, modely nimi vyrabanych tranzistorov SiC MOSFET, priklady simulacie obvodov v programoch LTSpice a PSIM, ako v elektronickej simulacii zohladnit vplyv meniacej sa teploty teploty puzdra
— [26] Informacia o simulacnom programe PLECS (2022) spolocnosti PLEXSIM – program je urceny pre vykonovu elektroniku, ma STANDALONE verziu a verziu ako blockset pre SIMULINK, spomina ho Wolfspeed
ZDROJE A POPIS CO V NICH JE :
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[1] ON SEMICONDUCTOR SiC MOSFET Corner and Statistical SPICE Model Generation
— [1] clanok sa venuje statistickym modelom vykonovych tranzistorov postavenych na SPICE postavenom na fyzikalnom modeli SiC MOSFET
— slajd 5. „Physically Based SPICE Models“ ukazuje ako vyzera SPICE model pre SiC MOSFET a na dalsom slajde su typicke krivky
— na slajde je odvolavka na zdrojovu publikaciu (APEC 2017)
— ULOHA pre Tomasa : Zohnat tento clanok („A Physically Based Scalable SPICE Model for Silicon carbide Power MOSFETS, Canhong He, James Victory, APEC 2017, link[2])
— Physical model –> Physically Based SPICE Models
SOURCES:
[1]https://psma.com/sites/default/files/uploads/node/6148/is041-sic-mosfet-corner-and-statistical-spice-model-generation.pdf
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\is041-sic-mosfet-corner-and-statistical-spice-model-generation.pdf
[2] https://www.semanticscholar.org/paper/A-physically-based-scalable-SPICE-model-for-silicon-He-Victory/ee71758e30c727f5ef71dfaa44b11d775ebe449f
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[2] YOU TUBE: LTspice Modelling of Wolfspeed SiC MOSFET and SiC Diode
— This video demonstrates how to add a SiC MOSFET and SiC diode using Wolfspeed’s (byvaly Cree)SPICE models in a simple DC chopper application.
— LTSpice a ako pracovat s uz hotovym modelom SiC MOSFET spolocnosti Wolfspeed (https://en.wikipedia.org/wiki/Wolfspeed) a CRES
URL: https://www.youtube.com/watch?v=vFCtCPUcJMg&ab_channel=PowerElectronicswithDr.K
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[3] YOU TUBE: SPICE Compact Models for CoolSiC™ MOSFETs | Infineon
— [1]video v ramci Infinieon Academy
— This training helps you understand how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
— ULOHY PRE TOMASA:
— vytypovat SiC MOSFET Modul/tranzistor najblizssi pouzitemu v DP (vybrat to podla datasheetu)a vyziadat ho cez stranku [2]
— preskumat na tejto stranke ponuky roznych modelov – medzi nimi su modely SPICE a PSPICE
— stranky Infineon:
— [3]Silicon Carbide MOSFET Modules
— automotive SiC komponenty su uvedene aj tu [4] CoolSiC™ Products
— stranka venovana modelom Infineon:
— Welcome to Infineon’s Power MOSFET Simulation Models
— [5]doplnujuci material Infineon v PDF : Simulation models for Infineon Power MOSFET Application Note AN 2014-02 V2.0 Feb. 2014
— Infineon ma 4 urovne modelov vykonovycgh suciastok
kap.3 Definition of Modelling Levels
3.1 Infineon Level 0 (basic function)
3.2 Infineon Level 1 (constant temperature)
3.3 Infineon Level 2 (dynamic temperature setting)
3.4 Infineon Level 3 (electro-thermal calculation)
— POZNAMKA: v DP by sme mali urobit aspon Level 0 a preskumat moznost vytvorenia Level 1 az Level 2
— je tam zaujimava veta v kap 6.3 :
„As PSpice was originally not designed for power electronics and highly non-linear components, the standard simulation parameters (Simulation Setup/Options) are often not suitable. In common, the following typicalvalues facilitate convergence: a nasleduje tabulka s parametrami simualcie “
–podobne o nastaveni parametrov simulacie pre komponenty SiC v SPICE sa pise na stranke [6]
SOURCES:
[1]URL: https://www.youtube.com/watch?v=xqPJKhoggOo&ab_channel=Infineon4Engineers
[2]https://www.infineon.com/models
[3] https://www.infineon.com/cms/de/product/power/mosfet/silicon-carbide/modules/?intc=reco
[4] https://www.infineon.com/cms/en/product/technology/silicon-carbide-sic/?redirId=135446
[5]URL: https://www.infineon.com/dgdl/Infineon-ApplicationNote_PowerMOSFET_SimulationModels-AN-v01_00-EN.pdf?fileId=5546d46250cc1fdf0151588db5ef1b18
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Infineon-ApplicationNote_PowerMOSFET_SimulationModels-AN-v01_00-EN.pdf
[6] http://www.5spice.com/html/sic_models.html
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[4] CLANOK: Analytical PSpice model for SiC MOSFET based high power modules, 2016
— podrobny popis vytvorenia modelu SiC MOSFET tranzistora
— pracuje sa v SW PSPICE, je tam model a potom aj model kde sa sub model testuje
URL: https://www.sciencedirect.com/science/article/pii/S0026269216300556
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\1-s2.0-S0026269216300556-main.pdf
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[5] Clanok: Study on the Pspice simulation model of SiC MOSFET base on its datasheet, November 2015
–klucovy clanok navod ako vytvorit SPICE model z udajov v datasheete
URL: https://www.researchgate.net/publication/286932470_Study_on_the_Pspice_simulation_model_of_SiC_MOSFET_base_on_its_datasheet
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\290305_FP.pdf
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[6] Clanok: SiC SPICE Model and Analysis for New MOSFETs
— velmi nazorny clanok od Cadence (vyraba OrCAD)- povazujem ho za klucovy pohlad experta na modely SiC MOSFET
— [1] dobry pokec o modeloch – da sa prevziat do kapitoly od modeloch SiC MOSFET
— spomina clanky kde su rozne modely SiC MOSFET tranzistorov
— [2]clanok: Analytical PSpice model for SiC MOSFET based high power modules tento clanok mame ako [4]
SOURCES:
[1] URL: https://resources.pcb.cadence.com/blog/2020-sic-spice-model-and-analysis-for-new-mosfets
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\SiC SPICE Model and Analysis for New MOSFETs _ Advanced PCB Design Blog _ Cadence.pdf
[2] URL: https://www.mdpi.com/2079-9292/8/5/508/pdf
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\electronics-08-00508.pdf
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[7] Clanok: Sic MOSFET Modeling and Simulation for Pspice, 2015
— dalsi clanok o modeli SiC MOSFET tranzistora
URL: https://www.atlantis-press.com/proceedings/ameii-15/21987
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\21987.pdf
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[8] Clanok: Development of a PSpice Model for SiC MOSFET Power Modules
— [1]clanok si treba kupit
— Abstract:
In this paper, the static and dynamic characteristics of a 1200 V and 120 A silicon carbide (SiC) MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. Experimental measurements and PSpice simulations are performed to extract the technology dependent modeling parameters. The model is implemented in the PSpice circuit simulation platform using both standard components and analog behavior modeling (ABM) blocks. The simulation results of the model is fairly accurate and correlates well with the measured results over a wide temperature range. The developed model is used to facilitate converter design at cell level and hence predict and optimize the cell performance (i.e., energy losses) with varying circuit parameters (e.g., stray inductances, temperatures, gate resistances etc.,).
[1]URL: https://www.scientific.net/MSF.858.1074
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[9] Informativny Clanok: Cree Releases SPICE Model for Silicon Carbide Power MOSFET (2012)
— Cree je firma vyrabajuca SiC MOSFET-y
— [1] clanok informuje o modeloch SPICE a charakterizuje ich ako:
„SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree’s behavior-based, temperature-dependent SPICE model is compatible with the LT spice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of Cree CMF10120D and CMF20120D Z-FETs in board-level circuit designs“
SOURCES:
[1]URL: https://eepower.com/new-industry-products/cree-releases-spice-model-for-silicon-carbide-power-mosfet/#
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Cree Releases SPICE Model for Silicon Carbide Power MOSFET – New Industry Products.pdf
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[10] Clanok: PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation, 2015
— [1] zamknuty IEEE clanok
— abstrakt hovori o simulacii v MATLAB-e a validacii tohoto modelu – pre uvedenie sposobu validacie je tento clanok dolezity
SOURCES:
[1]URL: https://ieeexplore.ieee.org/document/7855369
LOCAL
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[11] Firemny material ONSEMI (2021 – NOVY!)Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices
— najkompaktnejsi popis zakladneho modelu SiC MOSFET a SiC IGBT vratane popisu verifikacie tohoto modelu
— pre SPICE sa pouziva popis modelu ako „SiC MOSFET Subcircuit Model“
— [1] TOP zdroj pre diploma thesiss vybornou literaturou :
— dalsie materialy ONSEMI :
— [2] tento sa spomina v [16]
— ONSEMI SiC MOSFETs:Gate Drive Optimization
— dolezite pre diploma thesis – vybijanie kondenzatorov sa bude diat v linearnom rezime SiC MOSFET
SOURCES:
[1] URL: https://www.onsemi.com/pub/Collateral/TND6260-D.PDF
LOCAL: c:\Users\pancijra\Downloads\___WORK_DIRS_2022\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\TND6260-D.PDF
[2]URL: https://www.onsemi.com/pub/Collateral/TND6237-D.PDF
LOCAL: c:\Users\pancijra\Downloads\___WORK_DIRS_2022\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\TND6237-D.PDF
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[12] ROHM webstranky o SiC vykonovych polovodicoch – podla [13] jeden z potencialnych dodavatelov SiC komponentov pre SG
— [1] stranka – rozdelovnik „SiC MOSFETs“
— je tam tato charakteristika SiC komponentov :
“ SiC MOSFETs : SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature. ROHM’s 4th Generation SiC MOSFETOur latest 4th gen SiC MOSFETs provide industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.“
— dalsie stranky ROHM:
— [2]MOSFET＜Understanding MOSFET Characteristics＞ MOSFET Parasitic Capacitance and Temperature Characteristics:
–popis vlastnosti MOSFET-ov
–[3]Silicon Carbide＜Types of SiC Power Devices＞ SiC SBD Device Structure and Feature
— popis SiC – velmi prehladny , vhodny do Diploma project
–[4]prirucka ROHM v PDF: (nazov) Effective Use of Power Devices Silicon Carbide Power Devices Understanding & Application Examples Utilizingthe Merits
–TOP informacny zdroj
— od slajdu 53 sa venuje vykonovym modulom a ich parametrom a ich pouzitiu
— [5] material ROHM 4th Gen SiC MOSFETs
— DOLEZITA INFORMACIA: graf porovnania Inverter efficiency Mapp IGBT a SiC MOSFET – Significantly improved effciency in the high torque and low rotational speed range
— [6] ROHM ma svoj on-line obvodovy simulator podobny ako je Infineon Designer
SOURCES:
[1] https://www.rohm.com/products/sic-power-devices/sic-mosfet#easyPartFinder
[2] URL: https://www.rohm.com/electronics-basics/transistors/understanding-mosfet-characteristics
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\MOSFET ＜Understanding MOSFET Characteristics＞ _ Electronics Basics _ ROHM.pdf
[3] URL: https://www.rohm.com/electronics-basics/sic/types-of-sic-power
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Silicon Carbide ＜Types of SiC Power Devices＞ _ Electronics Basics _ ROHM.pdf
[4] URL: https://pages.rohm.com/rs/247-PYD-578/images/TechWeb_E_DL_SiC.pdf
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\TechWeb_E_DL_SiC.pdf
[5] URL: https://www.rohm.com/products/sic-power-devices/sic-mosfet#supportInfo
LOCAL: c:\Users\pancijra\Downloads\___WORK_DIRS_2022\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\SiC MOSFETs – Product Search Results _ ROHM Semiconductor – ROHM Co., Ltd_.pdf
[6] https://www.rohm.com/solution-simulator
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[13] Schaeffler material: Schaeffler Power Electronics Business Division E-Mobility of the Schaeffler Group Business Unit E-Motor & PEU Product Group Power Electronics10/2020
— [1] aktualny status vyvoja PEU v SG vratane uvedenia potencionalnych dodavatelov SIC
— slide str.35: uvedene kto potencialne dodava DIE (nezapuzdrene cipy) (status 2022):
Si IGBTs: – Renesas – ROHM Semiconductor – Infineon – OnSemi (ehm. Fairchild)
SiC MOSFETs: – ROHM Semiconductor – CREE / Wolfspeed- ST Microelectronic
SOURCES:
[1]URL: https://sconnect.schaeffler.com/docs/DOC-296195
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\PG_Power_Electronics_Unit_Info_Veranstaltung_20201019.pdf
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[14] Schaeffler material (2020): E-Motor & PEU
— stav eMotorov a PEU
— od 35. slajdu popis PEU
SOURCES:
[1]URL: https://sconnect.schaeffler.com/docs/DOC-263745
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\20200128_Schaeffler_eMotoren_PEU_handout.pdf
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[15] Clanok : Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET
— vyzera to tak, ze pouzitelny model SiC MOSFET zohladnuje teplotu –> vid urovne modelov v Infinineon [3]
SOURCES:
[1]URL: https://web.eecs.utk.edu/~tolbert/publications/apec_2012_yutian.pdf
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\apec_2012_yutian.pdf
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[16] TOP INFO Technical Article (2020): How to Simulate Silicon Carbide Transistors with LTspice
— [1] konkretny popis simulacie a simulacia SiC v LT Spice ma svoje specifika – inak: vsetci simuluju SiC MOSFET v LTSpice – je to referencny nasttroj
— This article reviews the silicon carbide scene and then explains how to get SiC SPICE models and incorporate them into a simulation circuit.
— konkretna simulacia The UCC21750 from Texas Instruments is an example of a gate-drive IC that is compatible with SiC MOSFETsfrom Wolfspeed . This diagram of a three-phase motor-control application is from the device’s datasheet.
— dalsie linky spominane v clanku:
— [2] The Semiconductor of Automotive Power Design: Who’s Offering SiC Components in 2019 (2019) ?
— [3] Exploring the Pros and Cons of Silicon Carbide (SiC) FETs: A New MOSFET from Cree (2017)
— [4]ONSEMI SiC MOSFETs:Gate Drive Optimization
— dolezite pre diploma thesis – vybijanie kondenzatorov sa bude diat v linearnom rezime SiC MOSFET
SOURCES:
[1] URL: https://www.allaboutcircuits.com/technical-articles/how-to-simulate-silicon-carbide-transistors-with-ltspice/
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\How to Simulate Silicon Carbide Transistors with LTspice – Technical Articles.pdf
[2] URL: https://www.allaboutcircuits.com/news/sic-in-2019-whos-offering-sic-components-automotive-power/
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\The Semiconductor of Automotive Power Design_ Who’s Offering SiC Components in 2019_ – News.pdf
[3] URL: https://www.allaboutcircuits.com/technical-articles/pros-cons-silicon-carbide-sic-fets-c3m0075120K-MOSFET-Cree/
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Exploring the Pros and Cons of Silicon Carbide (SiC) FETs_ A New MOSFET from Cree – Technical Articles.pdf
[4] URL: https://www.onsemi.com/pub/Collateral/TND6237-D.PDF
LOCAL: c:\Users\pancijra\Downloads\___WORK_DIRS_2022\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\TND6237-D.PDF
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[17] technical Articel (2020): tazisko simulqcie v LT Spice je tu kladene na budenie driverom
— How to Simulate SiC MOSFETs with LTspice: the Importance of a Good Driver
— tazisko simualcie v LT Spice je tu kladene na budenie driverom
SOURCES:
[1]
URL: https://www.powerelectronicsnews.com/how-to-simulate-sic-mosfets-with-ltspice-the-importance-of-a-good-driver/
LOCAL:
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[18] clanok (2017): modelovanie SiC MOSFET so zapocitanim tepelnych procesov
— Simulation Model of a SiC Power MOSFET Variables Estimation and Control of a Power Source
— modelovanie SiC MOSFET so zapocitanim tepelnych procesov
SOURCES:
[1]
URL: https://www.scitepress.org/papers/2017/64608/64608.pdf
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\64608.pdf
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[19] vedecky clanok (2021): prostredie MATLAB
— Modeling and analysis of the characteristics of SiC MOSFET
— prostredie MATLAB
SOURCES:
[1]
URL: https://iopscience.iop.org/article/10.1088/1742-6596/2125/1/012051/pdf
LOCAL:…\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Qiu_2021_J._Phys.__Conf._Ser._2125_012051.pdf
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[20] Clanok IEEE (2017): Analysis of SPICE models for SiC MOSFET power devices
— Analysis of SPICE models for SiC MOSFET power devices
— zamknuty clanok
SOURCES:
[1]
URL: https://www.semanticscholar.org/paper/Analysis-of-SPICE-models-for-SiC-MOSFET-power-Stefanskyi-Starzak/abde07bf3ccc51f67525455f5ff3fe2793f918dc
LOCAL:
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[21] technicky clanok (2020): modelovanie SiC MOSFET v LTSpice, prakticke skusenosti
— Electronic – SiC MOSFET SPICE model not behaving properly
—
SOURCES:
[1]
URL: https://itecnotes.com/electrical/electronic-sic-mosfet-spice-model-not-behaving-properly/
LOCAL:
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[22] Clanok(2022): Specifika modelovania SiC MOSFET
— Improved simulation modelling and its verification for SiC MOSFET
— Specifika modelovania SiC MOSFET
SOURCES:
[1]
URL: https://ietresearch.onlinelibrary.wiley.com/doi/full/10.1049/pel2.12263
LOCAL:…\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\IET Power Electronics – 2022 – Yang – Improved simulation modelling and its verification for SiC MOSFET.pdf
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[23] Clanok (2016): PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation
— PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation
SOURCES:
[1]
URL: https://vbn.aau.dk/ws/portalfiles/portal/249465091/EC_0083_PSpice_Modeling_Platform_for_SiC_Power_MOSFET_Modules_with_Extensive_Experimental_Validation.pdf
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\EC_0083_PSpice_Modeling_Platform_for_SiC_Power_MOSFET_Modules_with_Extensive_Experimental_Validation.pdf
[2]
URL: https://www.researchgate.net/publication/310788133_PSpice_Modeling_Platform_for_SiC_Power_MOSFET_Modules_with_Extensive_Experimental_Validation
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\PID4327021.pdf
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[24] Firemny material (2020): MICROCHIPpopis modelov SiC vykonovych komponenetov
— Silicon Carbide Products SPICE & PLECS Files
—
SOURCES:
[1]
URL: https://www.microchip.com/en-us/software-library/sic-products-spice-files
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\SecondGenSpiceFiles.docx
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[25] Firemny material (2020): WolfSpeed – potencialny dodavatel pre SG
— [1] www stranka „LTspice and PLECS Models“ – su tam aj vsetky SiC MOSFET
— [2] simulator „SpeedFit 2.0 Design Simulator™“
Accelerate the design process with simulation results you can trust. SpeedFit 2.0 quickly calculates losses and estimates junction temperature for power devices based on lab data for common topologies ranging from simple buck and boost converters to a fully bi-directional totem pole PFC with resonant DC/DC converter. Using SpeedFit 2.0, you can quickly determine:
— [3] clanok „Modeling common topologies with Wolfspeed Silicon Carbide MOSFETs“ sa orientuje na LTSpice a modleovanie SiC MOSFEt s cielom dosiahnut/porovnat datsheetove udaje
— [4] clanok „Wolfspeed SiC MOSFET SPICE Model Quick Start Guide“ – zaobera sa integraciou modelov SiC MOSFET do programu PSPICE – treba si vsimnut teplotny vstup ktory treba v simulacii osetrit, ako priklad simualcie s SIC MOSFET-om je uvedeny PSPICE model of the Boost converter (str.9)
SOURCES:
[1] https://www.wolfspeed.com/tools-and-support/power/ltspice-and-plecs-models/
[2] https://www.wolfspeed.com/tools-and-support/power/speedfit/
[3]
URL: https://www.wolfspeed.com/knowledge-center/article/modeling-common-topologies-with-wolfspeed-silicon-carbide-mosfets/
LOCAL: …\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Modeling common topologies with Wolfspeed Silicon Carbide MOSFETs _ Wolfspeed.pdf
[4]
URL: https://usermanual.wiki/Document/Wolfspeed20SiC20Mosfet20OrCad20Pspice20Model20Quick20Start20Guide2020Rev20102020Feb202018.2143847398.pdf
…\220615 DP VLCEK Tomas\SOURCES\220922 Resers SiC MOSFET SPICE model creation\Wolfspeed20SiC20Mosfet20OrCad20Pspice20Model20Quick20Start20Guide2020Rev20102020Feb202018.2143847398.pdf
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[26] Informacia o simulacnom programe PLECS (2022) spolocnosti PLEXSIM – program je urceny pre vykonovu elektroniku, ma STANDALONE verziu a verziu ako blockset pre SIMULINK
— [1] stranka na wikipeii
— Wolfspeed na svojich strankach riesi aj integraciu svojich modelov SiC MOSFET tranzistorov do programu PLECS (popri LTSpice a PSPICE)
— [2] uvodne video popisuje STANDALONE verziu
— ULOHA: Zaradit info o tomto programe do diplomovej prace
SOURCES:
[1] https://en.wikipedia.org/wiki/PLECS
[2] https://www.youtube.com/watch?v=iK2ebV9XcyM&ab_channel=Plexim
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